CVD reactor Johan

User modified Aixtron 200 MOCVD reactor with control, safety and in-situ analysis equipment for the deposition of III-V semiconductor materials and structures on 2 inch diameter wafers (GaAs, InP, Ge).

Source lines: Al, In, Ga, As, P

Doping elements: Si, Te, Zn, C

Availability 

Reactor is clean room based and only operated by an experienced AMS staff member.

Samples can be prepared on request in cooperative research.